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Electron mobility
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81	646 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 36. NO. 4, APRIL 1989 A Recessed-Gate In,.52A10.48As/n+-1%.53G%. 4 7 A ~ MIS-type FET Add to Reading List Source URL: www-mtl.mit.edu Language: English - Date: 2013-04-16 14:15:15 High electron mobility transistor Field-effect transistor MODFET Double heterostructure Transistor Threshold voltage MESFET Transconductance Semiconductor Electronics Technology Electromagnetism
82	NEWS & VIEWS Graphene Nanoelectronics goes flat out The unique electronic band structure of graphene has led to a number of exotic effects that have fascinated fundamental researchers and may also lead to improvements in Add to Reading List Source URL: www.physics.rutgers.edu Language: English - Date: 2008-09-05 10:27:56 Nanomaterials Emerging technologies Superhard materials Graphene Carbon nanotube Philip Kim Bilayer graphene Electron mobility Field-effect transistor Chemistry Physics Materials science
83	IEEE ELECTRON DEVICE LETTERS, VOL. IO, NO. 8, AUGUST[removed]An Add to Reading List Source URL: www-mtl.mit.edu Language: English - Date: 2013-04-16 14:15:15 MISFET MOSFET Semiconductor devices High electron mobility transistor MODFET Field-effect transistor Diode Optical fiber Transistor Chemistry Technology Electromagnetism
84	High mobility p-channel HFETs using strained Sb-based materials J.B. Boos, B.R. Bennett, N.A. Papanicolaou, M.G. Ancona, J.G. Champlain, R. Bass and B.V. Shanabrook Antimonide-based p-channel HFETs with a 0.25 mm gate le Add to Reading List Source URL: www.nrl.navy.mil Language: English - Date: 2013-11-22 13:51:51 Semiconductor devices MOSFET Field-effect transistor Transistor High electron mobility transistor Threshold voltage Transconductance Quantum well Electronics Electrical engineering Electromagnetism
85	Compact model for ultra-short channel four-terminal DG MOSFETs for exploring circuit characteristics T. Nakagawa, T. Sekigawa, T. Tsutsumi*, M. Hioki, E. Suzuki, and H. Koike * Electroinformatics Group, Add to Reading List Source URL: www.nsti.org Language: English - Date: 2011-11-18 13:54:24 Electrical engineering Semiconductors Short-channel effect Transistor Field-effect transistor Electron mobility Drain Induced Barrier Lowering Channel length modulation Power MOSFET Electronic engineering Technology MOSFET
86	InAs HEMT narrowband ampliﬁer with ultra-low power dissipation W. Kruppa, J.B. Boos, B.R. Bennett, N.A. Papanicolaou, D. Park and R. Bass The design, fabrication and performance of a prototype narrowband ampliﬁer usi Add to Reading List Source URL: www.nrl.navy.mil Language: English - Date: 2013-11-22 12:53:46 High electron mobility transistor Electromagnetism Gain compression Technology Transistor Electronics
87	IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 57, NO. 3, MARCH[removed]Electron Transport in Graphene From a Diffusion-Drift Perspective Add to Reading List Source URL: www.nrl.navy.mil Language: English - Date: 2013-11-22 16:02:47 Nanomaterials Emerging technologies Superhard materials Graphene Bilayer graphene Field-effect transistor Silicon carbide Electron mobility MOSFET Chemistry Physics Materials science
88	PRISM Seminar Series – Spring 2011 “Characterization of the Thermal and Mechanical Response of GaN High Electron Mobility Devices” Samuel Graham Associate Professor of Mechanical Engineering Add to Reading List Source URL: www.purdue.edu Language: English Gallium nitride Nitrides Heat transfer Reliability Phonon Spectroscopy Raman spectroscopy Thermal conductivity Semiconductor Chemistry Physics Electronic design
89	July 1, [removed]Vol. 32, No[removed]OPTICS LETTERS[removed]Terahertz time-domain magnetospectroscopy of a high-mobility two-dimensional electron gas Add to Reading List Source URL: www.ece.rice.edu Language: English - Date: 2007-07-07 16:54:14 Condensed matter physics Explosives detection Spectroscopy Terahertz time-domain spectroscopy Terahertz radiation 2DEG Electron cyclotron resonance Resonance Effective mass Electromagnetic radiation Physics Electromagnetic spectrum
90	Direct measurement of cyclotron coherence times of high-mobility two-dimensional electron gases X. Wang1 , D. J. Hilton2 , J. L. Reno3 , D. M. Mittleman1 , and J. Kono1,∗ 1 Department Add to Reading List Source URL: www.ece.rice.edu Language: English - Date: 2010-06-01 15:36:08 Scattering Explosives detection Spectroscopy Terahertz time-domain spectroscopy Terahertz radiation Resonance Infrared Microwave Frequency Electromagnetic radiation Physics Electromagnetic spectrum

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